BLP05N08G - N-channel Enhanced Power MOSFET

BELLING

General Description

BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This is suitable device for motor drivers and high speed switching applications.

Key Features

Fast Switching.
Low On-Resistance ( RDS(on)≤5mΩ ).
Low Gate Charge.
Low Reverse transfer capacitances.
High avalanche ruggedness.
RoHS product.

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BLP05N08G n-channel enhanced power mosfet by BELLING - Datasheet Preview

Datasheet Details

Part number	BLP05N08G
Manufacturer	BELLING
File Size	0.96 MB
Description	N-channel Enhanced Power MOSFET
Datasheet	BLP05N08G Datasheet

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Full PDF Text Transcription (Reference)

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BLP05N08G Step-Down Converter 1．Description , BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit VDSS 85 V ID 120 A RDS(on).typ 4.