BLP05N08G Overview
, BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit VDSS 85 V ID 120 A RDS(on).typ 4.4.
BLP05N08G Key Features
- Fast Switching
- Low On-Resistance ( RDS(on)≤5mΩ )
- Low Gate Charge
- Low Reverse transfer capacitances
- High avalanche ruggedness
- RoHS product