Datasheet Details
| Part number | BLQM07N06 |
|---|---|
| Manufacturer | BELLING |
| File Size | 745.94 KB |
| Description | 60V N-Channel Power MOSFET |
| Datasheet |
 BLQM07N06 Datasheet
|
|
|
| Part number | BLQM07N06 |
|---|---|
| Manufacturer | BELLING |
| File Size | 745.94 KB |
| Description | 60V N-Channel Power MOSFET |
| Datasheet |
BLQM07N06 Datasheet
|
|
|
|
The BLQM07N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge.
It can be used in a wide variety of applications.
Application ● Valves control ● Solenoids control ● Lighting KEY CHARACTERISTICS ● VDS = 60V,ID = 95A RDS(ON) < 7.0mΩ @ VGS=10V ● Special process technology for high ESD capability ● High density cell design for lower Rdson ● 175°C operating temperature ● Good stability and uniformity with high EAS ● AEC Q101 qualified ● MSL1 up to 260°C peak reflow 100% UIS TESTED！ 100% DVDS TESTED！ TO-252-2L Top View Package Marking And Ordering Information Schematic diagram Device Marking QM07N06 Ordering Codes BLQM07N06-D Package TO-252-2L Product Code BLQM07N06 Packing Tape Reel Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation(Tc=25℃) Single pulse avalanche energy(Note 2) Operating Junction and Storage Temperature Range Thermal Characteristic Symbol VDS VGS ID IDM PD EAS TJ,TSTG Limit 60 ±20 95 380 330 260 -55 To 175 Unit V V A A W mJ ℃ Thermal Resistance,Junction-to-Case Thermal Resistance,Junction-to-Ambient RθJC RθJA 0.45 ℃/W 62.5 ℃/W Page1 www.belling.com.cn V1.0 Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics Gate Threshold Voltage Drain-Source On-State Resistance(Note 3) Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) Clss Coss Crss td(on) tr td(off) tf Qg Qgs Qg
Green Product BLQM07N06 60V N-Channel Power MOSFET.
| Part Number | Description |
|---|---|
| BLQM08N06 | 60V N-Channel Power MOSFET |
| BLQM15N06L | 60V N-Channel Power MOSFET |