Datasheet Details
| Part number | BLQM08N06 |
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| Manufacturer | BELLING |
| File Size | 605.73 KB |
| Description | 60V N-Channel Power MOSFET |
| Datasheet |
 BLQM08N06 Datasheet
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| Part number | BLQM08N06 |
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| Manufacturer | BELLING |
| File Size | 605.73 KB |
| Description | 60V N-Channel Power MOSFET |
| Datasheet |
BLQM08N06 Datasheet
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The BLQM08N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge.
It can be used in a wide variety of applications.
Application ●Power switching application ●Hard switched and High frequency circuits ●Uninterruptible power supply KEY CHARACTERISTICS ● VDS = 60V,ID = 80A RDS(ON) < 8.0mΩ @ VGS=10V ● Special process technology for high ESD capability ● High density cell design for lower Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation 100% UIS TESTED！ 100% DVDS TESTED！ TO-252-2L Top View Package Marking And Ordering Information Device Marking QM08N06 Ordering Codes BLQM08N06-D Package TO-252-2L Schematic diagram Product Code BLQM08N06 Packing Tape Reel Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation(Tc=25℃) Single pulse avalanche energy(Note 2) Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Case RθJC Limit 60 ±20 80 320 107 280 -55 To 175 Unit V V A A W mJ ℃ 1.4 ℃/W Page1 www.belling.com.cn V 1.0 Green Product BLQM08N06 Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics Gate Threshold Voltage Drain-Source On-State Resistance(Note 3) Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage Symbol Condition BVDSS IDSS IGSS VGS=0V
Green Product BLQM08N06 60V N-Channel Power MOSFET.
| Part Number | Description |
|---|---|
| BLQM07N06 | 60V N-Channel Power MOSFET |
| BLQM15N06L | 60V N-Channel Power MOSFET |