Datasheet Details
| Part number | P042N10G |
|---|---|
| Manufacturer | BELLING |
| File Size | 0.98 MB |
| Description | MOSFET |
| Datasheet |
 P042N10G Datasheet
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| Part number | P042N10G |
|---|---|
| Manufacturer | BELLING |
| File Size | 0.98 MB |
| Description | MOSFET |
| Datasheet |
P042N10G Datasheet
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BLP042N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench Ⅱ technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
This is suitable device for Synchronous rectification and high speed switching applications.
KEY CHARACTERISTICS Parameter Value Unit VDSS 100 V TO-220 ID 120 A RDS(on)@10V.typ 3.7 mΩ
BLP042N10G MOSFET Step-Down Converter 1．.
| Part Number | Description |
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