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CS18P06D - P-CHANNEL MOSFET

Key Features

  • Super high dense cell design for low R ，DS(on) Rugged and reliable，surface mount package，ESD protected. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDS ID(Tc=25℃) ID(Tc=70℃) IDM VGS EAS PD(Tc=25℃) PD(Tc=70℃) TJ,TSTG -60 -18 -14.5 -50 ±20 36 42 27 -55 to 150 V A A A V mJ W W ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=-250μA IDSS VDS=-48V VGS=0V IGSS VGS=±20V VDS=0V VGS(th) VDS=VGS ID=-250μA RDS(on) VGS=-10V VGS=-4.5V ID=.

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Datasheet Details

Part number CS18P06D
Manufacturer BLUE ROCKET ELECTRONICS
File Size 319.87 KB
Description P-CHANNEL MOSFET
Datasheet download datasheet CS18P06D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BRD18P06(CS18P06D) P-CHANNEL MOSFET/P MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ，，，ESD 。 Features: Super high dense cell design for low R ，DS(on) Rugged and reliable，surface mount package，ESD protected. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDS ID(Tc=25℃) ID(Tc=70℃) IDM VGS EAS PD(Tc=25℃) PD(Tc=70℃) TJ,TSTG -60 -18 -14.5 -50 ±20 36 42 27 -55 to 150 V A A A V mJ W W ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=-250μA IDSS VDS=-48V VGS=0V IGSS VGS=±20V VDS=0V VGS(th) VDS=VGS ID=-250μA RDS(on) VGS=-10V VGS=-4.