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CS12N60 - N-CHANNEL MOSFET

Key Features

  • Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 600 V ID(Tc=25℃) 12 A ID(Tc=100℃) 7.4 A IDM 48 A VGSS ±30 V EAS 870 mJ EAR 22.5 mJ IAR 12 A PD(Tc=25℃) 225 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=600V VDS=480V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=6A gFS VDS=40V ID=6A VSD VGS=0.

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Datasheet Details

Part number CS12N60
Manufacturer BLUE ROCKET ELECTRONICS
File Size 239.01 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet CS12N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BR12N60(CS12N60) N-CHANNEL MOSFET/N MOS : ， PFC 。 Purpose: These devices are well suited for high efficient switched mode power supplies,active power factor correction,electronic lamp ballast based on half bridge topology. : ,,。 Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 600 V ID(Tc=25℃) 12 A ID(Tc=100℃) 7.4 A IDM 48 A VGSS ±30 V EAS 870 mJ EAR 22.