CS8N60F - N-CHANNEL MOSFET

BLUE ROCKET ELECTRONICS

Key Features

Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 600 V ID(Tc=25℃) 7.5 A ID(Tc=100℃) 4.6 A IDM 30 A VGSS ±30 V EAS 230 mJ EAR 10 mJ IAR 7.5 A PD(Tc=25℃) 48 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=600V VDS=480V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=3.75A gFS VDS=40V ID=3.75A VSD VGS.

CS8N60F n-channel mosfet by BLUE ROCKET ELECTRONICS - Datasheet Preview

Datasheet Details

Part number	CS8N60F
Manufacturer	BLUE ROCKET ELECTRONICS
File Size	231.07 KB
Description	N-CHANNEL MOSFET
Datasheet	CS8N60F Datasheet

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BRF8N60(CS8N60F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,,。 Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 600 V ID(Tc=25℃) 7.5 A ID(Tc=100℃) 4.6 A IDM 30 A VGSS ±30 V EAS 230 mJ EAR 10 mJ IAR 7.5 A PD(Tc=25℃) 48 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=600V VDS=480V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=3.75A gFS VDS=40V ID=3.75A VSD VGS=0V IS=7.5A Ciss Coss VDS=25V VGS=0V f=1.0MHz Crss td(on) tr td(off) VDD=300V ID=7.