BP0405SCG Overview
Description
The BP0405SCG uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications.
Key Features
- N-Channel VDS =40V, ID =6A RDS(ON) < 26mΩ @ VGS=10V
- P-Channel VDS =-40V, ID =-5A RDS(ON) < 60mΩ @ VGS=-10V
- High power and current handing capability
