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BPMS04N003M - 40V N-Channel Power MOSFET

General Description

The BPMS04N003M uses super trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Key Features

  • BVDSS = 40V, ID = 110A.
  • RDS(ON)_TYP = 2.4mΩ @ VGS = 10V. RDS(ON)_TYP = 3.3mΩ @ VGS = 4.5V.
  • Fast switching capability.
  • Robust design with better EAS performance.
  • EMI Improved Design.
  • 100% UIS Tested Typical.

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Datasheet Details

Part number BPMS04N003M
Manufacturer BPS
File Size 670.12 KB
Description 40V N-Channel Power MOSFET
Datasheet download datasheet BPMS04N003M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Bright Power Semiconductor BPMS04N003M 40V N-Channel Power MOSFET General Description The BPMS04N003M uses super trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for highfrequency switching and synchronous rectification. The BPMS04N003M is available in DFN5*6 package. Features ◼ BVDSS = 40V, ID = 110A ◼ RDS(ON)_TYP = 2.4mΩ @ VGS = 10V. RDS(ON)_TYP = 3.3mΩ @ VGS = 4.5V ◼ Fast switching capability.