BF8205T Key Features
- Low on-state resistance RDS(on) ≤ 22.0mΩ TYP(VGS = 4.5V, ID = 3.0A) RDS(on) ≤ 32.0mΩ TYP(VGS = 2.5V, ID = 3.0A)
- Part: BF8205T
- Manufacturer: BYD Microelectronics
- Size: 209.57 KB
Other BF8205T Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
BYD |
BF8205E | Dual N-Channel MOSFET |
BF8205T Description
The BF8205T is a dual N-channel MOS Field Effect Transistor, Which is applied to electronic systems as a power switch.