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AM4502C - P & N-Channel MOSFET

Datasheet Summary

Description

The AM4502C uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for used as DC-DC converters and power managements in portable and battery-powered products.

Features

  • .
  • N-Channel: VDS (V) =30V P-Channel: VDS (V) =-30V.
  • Low on-state resistance N-Channel: RDS(on) = 16 mΩ MAX (VGS = 10V, ID =10A) RDS(on) = 20 mΩ MAX (VGS = 4.5V, ID = 8.4A) P-Channel: RDS(on) = 23 mΩ MAX (VGS = -10V, ID =-8.5A) RDS(on) = 33 mΩ MAX (VGS =-4.5V, ID =-6.8A).
  • Fast switching speed Absolute Maximum Ratings (Ta = 25℃).

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Datasheet preview – AM4502C

Datasheet Details

Part number AM4502C
Manufacturer BYD
File Size 880.03 KB
Description P & N-Channel MOSFET
Datasheet download datasheet AM4502C Datasheet
Additional preview pages of the AM4502C datasheet.

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    www.DataSheet.co.kr AM4502C BYD Microelectronics Co., Ltd. P & N-Channel MOSFET General Description The AM4502C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for used as DC-DC converters and power managements in portable and battery-powered products. Features • N-Channel: VDS (V) =30V P-Channel: VDS (V) =-30V • Low on-state resistance N-Channel: RDS(on) = 16 mΩ MAX (VGS = 10V, ID =10A) RDS(on) = 20 mΩ MAX (VGS = 4.5V, ID = 8.4A) P-Channel: RDS(on) = 23 mΩ MAX (VGS = -10V, ID =-8.5A) RDS(on) = 33 mΩ MAX (VGS =-4.5V, ID =-6.8A) • Fast switching speed Absolute Maximum Ratings (Ta = 25℃) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) a SYMBOL N-Channel P-Channel UNIT VDSS VGSS 30 20 10 8.
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