AM4502C Datasheet | BYD

.DataSheet.co.kr BYD Microelectronics Co., Ltd. P & N-Channel MOSFET General Description The AM4502C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for used as DC-DC converters and power managements in portable and battery-powered products. Features - N-Channel: VDS (V) =30V P-Channel: VDS (V) =-30V - Low on-state resistance N-Channel: RDS(on) = 16 mΩ MAX (VGS = 10V, ID =10A) RDS(on) = 20 mΩ MAX (VGS = 4.5V, ID = 8.4A) P-Channel: RDS(on) = 23 mΩ MAX (VGS = -10V, ID =-8.5A) RDS(on) = 33 mΩ MAX (VGS =-4.5V, ID =-6.8A) - Fast switching...