BYD AM4502C
The AM4502C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for used as DC-DC converters and power managements in portable and battery-powered products.| Part No. | AM4502C |
|---|---|
| Datasheet | AM4502C Download |
| Manufacturer |  BYD |
| Description | P & N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● N-Channel: VDS (V) =30V P-Channel: VDS (V) =-30V● Low on-state resistance N-Channel: RDS(on) = 16 mΩ MAX (VGS = 10V, ID =10A) RDS(on) = 20 mΩ MAX (VGS = 4.5V, ID = 8.4A) P-Channel: RDS(on) = 23 mΩ MAX (VGS = -10V, ID =-8.5A) RDS(on) = 33 mΩ MAX (VGS =-4.5V, ID =-6.8A)
● Fast switching speed
ABSOLUTE MAXIMUM RATINGS
(Ta = 25℃) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) a SYMBOL N-Channel P-Channel UNIT VDSS VGSS 30 20 10 8.1 ±50 -30 -25 -8.5 -6.8 ±50 V V A A TA=25℃ TA=70℃ b ID(DC) ID(pulse) Drain Current (pulse) Total Power Dissipation Channel Temperature Contnuous Source Current (Diode Conduction)a TA=25℃ a TA=70℃ IS PT Tch Tstg 2.3 2.1 1.3 150 -2.1 2.1 1.3 A W ℃ ℃ Operating Junction and Storage Temperature Range -55~+150 THERMAL RESISTANCE RATINGS Parameter Symbol t<=10sec RθJA Maximum Junction-to-Ambient Steady State Maximum 62.5 110 Units ℃/W ℃/W Note a. Mounted on FR4 Board of 1”x1”. b. Pulse width limited by maximum junction temperature Caution: These values must not be exceeded under any conditions.
