Datasheet4U Logo Datasheet4U.com

AM4502C - P & N-Channel MOSFET

General Description

The AM4502C uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for used as DC-DC converters and power managements in portable and battery-powered products.

Key Features

  • .
  • N-Channel: VDS (V) =30V P-Channel: VDS (V) =-30V.
  • Low on-state resistance N-Channel: RDS(on) = 16 mΩ MAX (VGS = 10V, ID =10A) RDS(on) = 20 mΩ MAX (VGS = 4.5V, ID = 8.4A) P-Channel: RDS(on) = 23 mΩ MAX (VGS = -10V, ID =-8.5A) RDS(on) = 33 mΩ MAX (VGS =-4.5V, ID =-6.8A).
  • Fast switching speed Absolute Maximum Ratings (Ta = 25℃).

📥 Download Datasheet

Datasheet Details

Part number AM4502C
Manufacturer BYD
File Size 880.03 KB
Description P & N-Channel MOSFET
Datasheet download datasheet AM4502C Datasheet

Full PDF Text Transcription for AM4502C (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AM4502C. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet.co.kr AM4502C BYD Microelectronics Co., Ltd. P & N-Channel MOSFET General Description The AM4502C uses advanced trench technology to provide excellent RDS(O...

View more extracted text
The AM4502C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for used as DC-DC converters and power managements in portable and battery-powered products. Features • N-Channel: VDS (V) =30V P-Channel: VDS (V) =-30V • Low on-state resistance N-Channel: RDS(on) = 16 mΩ MAX (VGS = 10V, ID =10A) RDS(on) = 20 mΩ MAX (VGS = 4.5V, ID = 8.4A) P-Channel: RDS(on) = 23 mΩ MAX (VGS = -10V, ID =-8.5A) RDS(on) = 33 mΩ MAX (VGS =-4.5V, ID =-6.8A) • Fast switching speed Absolute Maximum Ratings (Ta = 25℃) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) a