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BF9024SPD-M - P-Channel MOSFET and Schottky Diode

General Description

The BF9024SPD-M uses advanced trench technology to Provide excellent RDS (ON) and low gate charge.

This device is suitable for used as a load switch or in PWM applications.

Key Features

  • MOSFET z z z VDS (V) = -20V ID = -2.7A Low on-state resistance RDS (on) < 90mΩ . (VGS = -4.5V) RDS (on) < 120mΩ . (VGS = -2.5V) VF=0.42V K D 1 2 3 4 1,2 Anode; 3 Source; 4 Gate 5,6 Drain; 7,8 Kathode K: Kathode;D: Drain Schottky Diode z Absolute Maximum Ratings (Ta = 25℃) Parameter Mosfet Drain to Source Voltage (MOSFET and Schottky) Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Maximun Power Dissipation Channel Temperature Storage Temperature Schottky Diode Reverse Volta.

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Datasheet Details

Part number BF9024SPD-M
Manufacturer BYD
File Size 364.90 KB
Description P-Channel MOSFET and Schottky Diode
Datasheet download datasheet BF9024SPD-M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BF9024SPD-M BYD Microelectronics Co., Ltd P-Channel MOSFET and Schottky Diode General Description The BF9024SPD-M uses advanced trench technology to Provide excellent RDS (ON) and low gate charge. This device is suitable for used as a load switch or in PWM applications. 8 7 6 5 Features MOSFET z z z VDS (V) = -20V ID = -2.7A Low on-state resistance RDS (on) < 90mΩ . (VGS = -4.5V) RDS (on) < 120mΩ .(VGS = -2.5V) VF=0.