BF90315SNS Datasheet | BYD

Description The BF90315SNS is a Single N-channel MOS Field Effect Transistor, which uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is applied in the electronic systems as a power switch. Features z VDS=30 V z ID=11.6 A z Low on-state resistance RDS (on) < 15 mΩ (VGS=10V) RDS (on) < 22 mΩ (VGS=4.5V) Absolute Maximum Ratings(TC = 25℃) Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage PD Power Dissipation TC = 25°C TJ,Tstg Operating and Storage Temperature Range (Note a) Value 30 11.6 48 ±20 2 -55 to +150 Unit V A A V W ℃ Ordering Information Part Number BF90315SNS Package SOP8 Packaging Tape & Reel TS-MOS-PD-0021 Rev.A/0 Page 1 of 7 BYD Microelectronics Co., Ltd. Electrical Characteristics (Tc = 25℃) Symbol Parameter Test Conditions BVDS...