BF90880SNL Overview
Description
This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications.
Key Features
- Typical RDS(ON) =8m Ω (VGS=10V,ID=40A)
- Fast switching z 100% avalanche tested
- Improved dv/dt capability
