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BF910N60 - N-Channel MOSFET

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BYD

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BF910N60 N-Channel MOSFET by BYD - Datasheet Preview — Datasheet preview – BF910N60

Datasheet Details

Part number	BF910N60
Manufacturer	BYD
File Size	256.52 KB
Description	N-Channel MOSFET
Datasheet	BF910N60 Datasheet
Additional preview pages of the BF910N60 datasheet.

Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.

Features

z VDS =600 V z ID =10A z RDS(ON) =0.65 Ω TYP(VGS=10V,ID=5.0A) z Low CRSS (typical 16pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) (Note1) VGS Gate-Source Voltage EAS SinglePulseAvalanche Energy (Note2) IAR Avalanche Current (Note1) EAR RepetitiveAvalancheEnergy (Note1) dv/dt PeakDiodeRecoverydv/dt (Note.

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Published: Apr 12, 2017 |