Datasheet4U Logo Datasheet4U.com

BF910N60L - N-Channel MOSFET

Download the BF910N60L datasheet PDF. This datasheet also covers the BF910N60 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • z VDS =600 V z ID =10A z RDS(ON) =0.65 Ω TYP(VGS=10V,ID=5.0A) z Low CRSS (typical 16pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) (Note1) VGS Gate-Source Voltage EAS SinglePulseAvalanche Energy (Note2) IAR Avalanche Current (Note1) EAR RepetitiveAvalancheEnergy (Note1) dv/dt PeakDiodeRecoverydv/dt (Note.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BF910N60-BYD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BF910N60L
Manufacturer BYD
File Size 256.52 KB
Description N-Channel MOSFET
Datasheet download datasheet BF910N60L Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BF900 Sicherungshalter Inter Control
BF900 n-channel dual gate MOSFET Siliconix
BF901 Silicon n-channel dual gate MOS-FETs NXP
BF901R Silicon n-channel dual gate MOS-FETs NXP
BF904 N-channel dual gate MOS-FETs NXP

Other Datasheets by BYD

Part Number Description
BF910N60 N-Channel MOSFET
BF9100BSNL N-Channel MOSFET
BF912N60 N-Channel MOSFET
BF912N60L N-Channel MOSFET
BF91404 N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
BYD Microelectronics Co., Ltd. BF910N60/BF910N60L 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features z VDS =600 V z ID =10A z RDS(ON) =0.65 Ω TYP(VGS=10V,ID=5.
Published: |