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BF92301P - P-Channel MOSFET

General Description

The BF92301P uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for used as a load switch or in PWM applications.

Key Features

  • z VDS (V) = -20V z ID = -2.8A z Low on-state resistance RDS (on) = 80mΩ TYP. (VGS = -4.5V) RDS (on) =100mΩ TYP. (VGS = -2.5V) BF92301P 20V P-Channel MOSFET Absolute Maximum Ratings (Ta = 25℃) Parameter P-MOSFET Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)a Maximun Power Dissipationa Channel Temperature Storage Temperature Symbol Value VDSS VGSS ID(DC) ID(pulse) PD Tch Tstg -20 ±8 -2.8 -8 1.3 150 -55~+150 Unit V V A A W ℃ ℃ Note: Mounted on FR4.

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Datasheet Details

Part number BF92301P
Manufacturer BYD
File Size 187.64 KB
Description P-Channel MOSFET
Datasheet download datasheet BF92301P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BYD Microelectronics Co., Ltd. General Description The BF92301P uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for used as a load switch or in PWM applications. Features z VDS (V) = -20V z ID = -2.8A z Low on-state resistance RDS (on) = 80mΩ TYP. (VGS = -4.5V) RDS (on) =100mΩ TYP.(VGS = -2.5V) BF92301P 20V P-Channel MOSFET Absolute Maximum Ratings (Ta = 25℃) Parameter P-MOSFET Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)a Maximun Power Dissipationa Channel Temperature Storage Temperature Symbol Value VDSS VGSS ID(DC) ID(pulse) PD Tch Tstg -20 ±8 -2.8 -8 1.3 150 -55~+150 Unit V V A A W ℃ ℃ Note: Mounted on FR4 Board of 1”x1”.