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BF92302N - N-Channel MOSFET

General Description

The BF92302N uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for used as a load switch or in PWM applications.

Key Features

  • z VDS (V) = 20V z ID = 3 A z Low on-state resistance RDS (on) = 50mΩ TYP. (VGS = 4.5V) RDS (on) = 60mΩ TYP. (VGS = 2.5V) BF92302N 20V N-Channel MOSFET Absolute Maximum Ratings (Ta = 25℃) Parameter N-MOSFET Symbol Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)a Maximun Power Dissipationa Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PD Tch Tstg 20 ±8 3 12 1.3 150 -55~+150 V V A A W ℃ ℃ Note: Mounted on FR4 Board of.

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Datasheet Details

Part number BF92302N
Manufacturer BYD
File Size 210.13 KB
Description N-Channel MOSFET
Datasheet download datasheet BF92302N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BYD Microelectronics Co., Ltd. General Description The BF92302N uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for used as a load switch or in PWM applications. Features z VDS (V) = 20V z ID = 3 A z Low on-state resistance RDS (on) = 50mΩ TYP.(VGS = 4.5V) RDS (on) = 60mΩ TYP.(VGS = 2.5V) BF92302N 20V N-Channel MOSFET Absolute Maximum Ratings (Ta = 25℃) Parameter N-MOSFET Symbol Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)a Maximun Power Dissipationa Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PD Tch Tstg 20 ±8 3 12 1.3 150 -55~+150 V V A A W ℃ ℃ Note: Mounted on FR4 Board of 1”x1”.