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BF92N60L - N-Channel MOSFET

This page provides the datasheet information for the BF92N60L, a member of the BF92N60 N-Channel MOSFET family.

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • z VDS =600 V z ID =2A z RDS(ON) =3.6Ω TYP(VGS=10V,ID=1A) z Low CRSS (typical 4.5pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS ID IDM VGS EAS IAR EAR dv/dt PD Tstg TL Drain-Source Voltage Drain Current(continuous)at Tc=25°C Drain Current (pulsed) (Note1) Gate-Source Voltage SinglePulseAvalanche Energy (Note2) Avalanche Current (Note1) RepetitiveAvalancheEnergy (Note1) PeakD.

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Datasheet preview – BF92N60L

Datasheet Details

Part number BF92N60L
Manufacturer BYD
File Size 275.98 KB
Description N-Channel MOSFET
Datasheet download datasheet BF92N60L Datasheet
Additional preview pages of the BF92N60L datasheet.

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Full PDF Text Transcription

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BYD Microelectronics Co., Ltd. BF92N60/BF92N60L/BF92N60R/BF92N60T 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features z VDS =600 V z ID =2A z RDS(ON) =3.6Ω TYP(VGS=10V,ID=1A) z Low CRSS (typical 4.
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