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BF92N60T - N-Channel MOSFET

Download the BF92N60T datasheet PDF. This datasheet also covers the BF92N60 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • z VDS =600 V z ID =2A z RDS(ON) =3.6Ω TYP(VGS=10V,ID=1A) z Low CRSS (typical 4.5pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS ID IDM VGS EAS IAR EAR dv/dt PD Tstg TL Drain-Source Voltage Drain Current(continuous)at Tc=25°C Drain Current (pulsed) (Note1) Gate-Source Voltage SinglePulseAvalanche Energy (Note2) Avalanche Current (Note1) RepetitiveAvalancheEnergy (Note1) PeakD.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BF92N60-BYD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BF92N60T
Manufacturer BYD
File Size 275.98 KB
Description N-Channel MOSFET
Datasheet download datasheet BF92N60T Datasheet

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Other Datasheets by BYD

Part Number Description
BF92N60 N-Channel MOSFET
BF92N60L N-Channel MOSFET
BF92N60R N-Channel MOSFET
BF92N7002 N-Channel MOSFET
BF92301P P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BYD Microelectronics Co., Ltd. BF92N60/BF92N60L/BF92N60R/BF92N60T 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features z VDS =600 V z ID =2A z RDS(ON) =3.6Ω TYP(VGS=10V,ID=1A) z Low CRSS (typical 4.