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BF96N60L Datasheet N-channel MOSFET

Manufacturer: BYD

Overview: BYD Microelectronics Co., Ltd. BF96N60/ BF96N60L 600V N-Channel MOSFET.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Key Features

  • z VDS =600 V z ID =5.5A z RDS(ON) =1.7 Ω TYP(VGS=10V,ID=2.75A) z CRSS (typical 7.0pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) (Note1) VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy (Note2) IAR Avalanche Current (Note1) EAR Repetitive Avalanche Energy (Note1) dv/dt Peak Diode Recovery dv/dt.

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