BF96N60
BF96N60 is N-Channel MOSFET manufactured by BYD.
Description
These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features z VDS =600 V z ID =5.5A z RDS(ON) =1.7 Ω TYP(VGS=10V,ID=2.75A) z CRSS (typical 7.0p F) z Fast switching
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25°C
IDM Drain Current (pulsed)
(Note1)
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy
(Note2)
IAR Avalanche Current
(Note1)
EAR Repetitive Avalanche Energy
(Note1) dv/dt
Peak Diode Recovery...
