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BF960NF06 Datasheet N-channel MOSFET

Manufacturer: BYD

Overview: BYD Microelectronics Co., Ltd. BF960NF06 60V N-Channel MOSFET.

Datasheet Details

Part number BF960NF06
Manufacturer BYD
File Size 242.23 KB
Description N-Channel MOSFET
Datasheet BF960NF06-BYD.pdf

General Description

This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge.

It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Tele and puter applications.

It is also intended for any application with low gate drive requirement.

Key Features

  • z VDS =60 V z ID =60A z Typical RDS(ON) =10m Ω (VGS=10V,ID=30A) z Fast switching z 100% avalanche tested z Improved dv/dt capability Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy IAR Avalanche Current PD Power Dissipation (TC = 25°C) TJ,Tstg TL Operating junction and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose （No.

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