BF960NF06
BF960NF06 is N-Channel MOSFET manufactured by BYD.
Description
This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Tele and puter applications. It is also intended for any application with low gate drive requirement.
Features z VDS =60 V z ID =60A z Typical RDS(ON) =10m Ω (VGS=10V,ID=30A) z Fast switching z 100% avalanche tested z Improved dv/dt capability
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25℃
IDM Drain Current (pulsed)
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
PD Power Dissipation (TC = 25°C)
TJ,Tstg TL
Operating junction and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose
（Note1）
（Note2） （Note1）
Value 60 60 240 ±20 215 38 138
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