Datasheet4U Logo Datasheet4U.com

BF960NF06T - N-Channel MOSFET

General Description

This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge.

It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications.

Key Features

  • z VDS =60 V z ID =60A z Typical RDS(ON) =10m Ω (VGS=10V,ID=30A) z Fast switching z 100% avalanche tested z Improved dv/dt capability TO-252 Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy IAR Avalanche Current PD Power Dissipation (TC = 25°C) TJ,Tstg Operating junction and Storage Temperature Range TL Maximum Lead Temperature for Soldering Pur.

📥 Download Datasheet

Datasheet Details

Part number BF960NF06T
Manufacturer BYD
File Size 201.94 KB
Description N-Channel MOSFET
Datasheet download datasheet BF960NF06T Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BF960 N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE Vishay Telefunken
BF961 N-Channel Dual Gate MOS-Fieldeffect Tetrode Vishay Telefunken
BF961 N-Channel Dual Gate MOS-Fieldeffect Tetrode New Jersey Semi-Conductor
BF963 Silicon N-Channel MOSFET Tetrode Siemens
BF964 N-Channel Dual Gate MOS-Fieldeffect Tetrode Vishay Telefunken

Other Datasheets by BYD

Part Number Description
BF960NF06 N-Channel MOSFET
BF96N60 N-Channel MOSFET
BF96N60L N-Channel MOSFET
BF9024SPD-M P-Channel MOSFET and Schottky Diode
BF9028DND-A N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BYD Microelectronics Co., Ltd. BF960NF06T 60V N-Channel MOSFET General Description This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any application with low gate drive requirement.