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BF9028DND-A - N-Channel MOSFET

General Description

The BF9028DND-A is a Dual N-Channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch.

This device has ESD-protection and low resistance characteristics.

Key Features

  • z VDS = 20V z ID =6A z Low on-state resistance z RDS(on) = 16.0mΩ TYP(VGS = 4.5V, ID = 3.0A) z RDS(on) = 17.5mΩ TYP(VGS = 3.8V, ID = 3.0A) z RDS(on) = 20.0mΩ TYP(VGS = 3.0V, ID = 3.0A) z RDS(on) = 23.0mΩ TYP(VGS = 2.5V, ID = 3.0A) z Built-in G-S protection diode against ESD z Lead Pb-free and Halogen-free 1 23 4 S1 G1 S2 G2 Absolute Maximum Ratings (Ta=25OC) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 20 V Gate to Source Voltage VGS ±10 V Drain Current (DC) Drain Cur.

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Datasheet Details

Part number BF9028DND-A
Manufacturer BYD
File Size 163.03 KB
Description N-Channel MOSFET
Datasheet download datasheet BF9028DND-A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BYD Microelectronics Co., Ltd. BF9028DND-A 20V N-Channel MOSFET General Description The BF9028DND-A is a Dual N-Channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection and low resistance characteristics. D D DD 87 6 5 Features z VDS = 20V z ID =6A z Low on-state resistance z RDS(on) = 16.0mΩ TYP(VGS = 4.5V, ID = 3.0A) z RDS(on) = 17.5mΩ TYP(VGS = 3.8V, ID = 3.0A) z RDS(on) = 20.0mΩ TYP(VGS = 3.0V, ID = 3.0A) z RDS(on) = 23.0mΩ TYP(VGS = 2.5V, ID = 3.