BF9028DND-A Datasheet | BYD

Description The BF9028DND-A is a Dual N-Channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection and low resistance characteristics. D D DD 87 6 5 Features z VDS = 20V z ID =6A z Low on-state resistance z RDS(on) = 16.0mΩ TYP(VGS = 4.5V, ID = 3.0A) z RDS(on) = 17.5mΩ TYP(VGS = 3.8V, ID = 3.0A) z RDS(on) = 20.0mΩ TYP(VGS = 3.0V, ID = 3.0A) z RDS(on) = 23.0mΩ TYP(VGS = 2.5V, ID = 3.0A) z Built-in G-S protection diode against ESD z Lead Pb-free and Halogen-free 1 23 4 S1 G1 S2 G2 Absolute Maximum Ratings (Ta=25OC) Parameter Symbol Ratings Unit Drain to Source Voltage 20 V Gate to Source Voltage ±10 V Drain Current (DC) Drain Current (pulse)a Maximun Power Dissipationb ID(DC) ID(pulse) PD 6A 24 A 2.0 W Channel Temperature Tch 150 ℃ Storage Temperature Tstg -55~+150 ℃ Notes a. PW<10us,Duty...