Datasheet4U Logo Datasheet4U.com

BF9028DND-GE - N-Channel MOSFET

General Description

The BF9028DND-GE is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch.

This device has ESD-protection and low resistance characteristics.

Key Features

  • z VDS=24 V z ID=6 A z Low on-state resistance RDS (on) < 19.5 mΩ (VGS=4.5V) RDS (on) < 20 mΩ (VGS=3.8V) RDS (on) < 26 mΩ (VGS=3.0V) RDS (on) < 30 mΩ (VGS=2.5V) Absolute Maximum Ratings(TC = 25℃) Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage PD Power Dissipation TC = 25°C TJ,Tstg Operating and Storage Temperature Range (Note a) Value 24 6 24 ±10 2.0 -55 to +150 Unit V A A V W ℃ Ordering Information Part.

📥 Download Datasheet

Datasheet Details

Part number BF9028DND-GE
Manufacturer BYD
File Size 213.31 KB
Description N-Channel MOSFET
Datasheet download datasheet BF9028DND-GE Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BF900 Sicherungshalter Inter Control
BF900 n-channel dual gate MOSFET Siliconix
BF901 Silicon n-channel dual gate MOS-FETs NXP
BF901R Silicon n-channel dual gate MOS-FETs NXP
BF904 N-channel dual gate MOS-FETs NXP

Other Datasheets by BYD

Part Number Description
BF9028DND-A N-Channel MOSFET
BF9028DNT N-Channel MOSFET
BF9024SPD-M P-Channel MOSFET and Schottky Diode
BF90315SNS N-Channel MOSFET
BF9035SNZ-M N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BYD Microelectronics Co., Ltd. BF9028DND-GE 20V N-Channel MOSFET General Description The BF9028DND-GE is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection and low resistance characteristics. Features z VDS=24 V z ID=6 A z Low on-state resistance RDS (on) < 19.5 mΩ (VGS=4.5V) RDS (on) < 20 mΩ (VGS=3.8V) RDS (on) < 26 mΩ (VGS=3.0V) RDS (on) < 30 mΩ (VGS=2.5V) Absolute Maximum Ratings(TC = 25℃) Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage PD Power Dissipation TC = 25°C TJ,Tstg Operating and Storage Temperature Range (Note a) Value 24 6 24 ±10 2.