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BF9028DNT - N-Channel MOSFET

General Description

The BF9028DNT is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch.

This device has ESD-protection and low resistance characteristics.

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Key Features

  • .
  • Can be driven by a 2.3 V power source.
  • Low on-state resistance RDS(on) = 16.0mΩ TYP(VGS = 4.5V, ID = 3.0A) RDS(on) = 17.5mΩ TYP(VGS = 3.8V, ID = 3.0A) RDS(on) = 22.0mΩ TYP(VGS = 2.5V, ID = 3.0A).
  • Built-in G-S protection diode against ESD.
  • Lead Pb-free and Halogen-free 14 Absolute Maximum Ratings(TC = 25℃) Symbol VDS ID IDM VGS PD TJ,Tstg TL Parameter Drain-Source Voltage Drain Current(continuous)at Tc=25℃ Drain Current (pulsed) Gate-Source Voltage Po.

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Datasheet Details

Part number BF9028DNT
Manufacturer BYD
File Size 287.13 KB
Description N-Channel MOSFET
Datasheet download datasheet BF9028DNT Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BYD Microelectronics Co., Ltd. BF9028DNT 20V N-Channel MOSFET 85 General Description The BF9028DNT is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection and low resistance characteristics. . TSSOP-8 1 : drain1 2,3 : source1 4 : gate1 5: gate2 6,7 : source2 8 : drain2 Features  • Can be driven by a 2.3 V power source • Low on-state resistance RDS(on) = 16.0mΩ TYP(VGS = 4.5V, ID = 3.0A) RDS(on) = 17.5mΩ TYP(VGS = 3.8V, ID = 3.0A) RDS(on) = 22.0mΩ TYP(VGS = 2.5V, ID = 3.