BYD BF98N60
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.| Part No. | BF98N60 |
|---|---|
| Datasheet | BF98N60 Download |
| Manufacturer |  BYD |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.FEATURES
z VDS =600 V z ID =8A z RDS(ON) =1.0 Ω TYP(VGS=10V ID=4.0A) z Low CRSS (typical 11pF) z Fast switchingABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) (Note1) VGS Gate-Source Voltage EAS SinglePulseAvalanche Energy (Note2) IAR Avalanche Current (Note1) EAR RepetitiveAvalancheEnergy (Note1) dv/dt PeakDiodeRecoverydv/dt (Note3)
