BF98N60L Datasheet N-channel MOSFET

Manufacturer: BYD

Overview: BYD Microelectronics Co., Ltd. BF98N60/BF98N60L 600V N-Channel MOSFET.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	BF98N60L
Manufacturer	BYD
File Size	255.64 KB
Description	N-Channel MOSFET
Datasheet	BF98N60L BF98N60 Datasheet (PDF)

General Description

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Key Features

z VDS =600 V z ID =8A z RDS(ON) =1.0 Ω TYP(VGS=10V ID=4.0A) z Low CRSS (typical 11pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) (Note1) VGS Gate-Source Voltage EAS SinglePulseAvalanche Energy (Note2) IAR Avalanche Current (Note1) EAR RepetitiveAvalancheEnergy (Note1) dv/dt PeakDiodeRecoverydv/dt (Note3).

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