Datasheet4U Logo Datasheet4U.com

B3910S - N-Channel 30-V (D-S) MOSFET

General Description

The B3910S is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON)=22mΩ@VGS=10V RDS(ON)=26mΩ@VGS=4.5V Super High Density Cell Design for Extremely Low RDS(ON) Exceptional On-Resistance and Maximum DC Current SOP-8 Package.

📥 Download Datasheet

Datasheet Details

Part number B3910S
Manufacturer BiTEK
File Size 56.71 KB
Description N-Channel 30-V (D-S) MOSFET
Datasheet download datasheet B3910S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
B39111-B3802-Z910 SURFACE ACOUSTIC WAVE FILTER EPCOS
B39111-B8100-L100 SAW Components Bandpass Filter Infineon Technologies
B39111B8103L100 IF Filters EPCOS
B39162-B9000-C710 Low-Loss Filter for Mobile Communication EPCOS
B39182-B7806-A510 Low-Loss Filter for Mobile Communication EPCOS

Other Datasheets by BiTEK

Part Number Description
B3942 N- and P-Channel 30-V (D-S) MOSFET
B3965D N- and P-Channel 40-V (D-S) MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel 30-V (D-S) MOSFET B3910S General Description The B3910S is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. Pin Configuration SD SD SD GD Features RDS(ON)=22mΩ@VGS=10V RDS(ON)=26mΩ@VGS=4.