B3910S Datasheet | BiTEK

N-Channel 30-V (D-S) MOSFET General Description The B3910S is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. Pin Configuration SD SD SD GD Features RDS(ON)=22mΩ@VGS=10V RDS(ON)=26mΩ@VGS=4.5V Super High Density Cell Design for Extremely Low RDS(ON)...