Bluecolour 2SC4002
NPN Silicon Triple Diffused Planar Transistor
APPLICATIONS
. The transistor is subdivided into two groups, D and E, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.ABSOLUTE MAXIMUM RATINGS
(Ta = 25oC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Range 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.18g Symbol VCBO VCEO VEBO IC ICP Ptot Tj TS Value 400 400 5 200 400 600 150 -55 to +150 Unit V V V mA mA mW OC OC Page 1 of 2 7/15/2011 Characteristics at Tamb=25 oC Parameter DC Current Gain at VCE=10V, IC=50mA Current Gain Group D E Collector Cutoff Current at VCB=300V Emitter Cutoff Current at VEB=4V Collector Emitter Saturation Voltage at IC=50mA, IB=5mA Base Emitter Saturation Voltage at IC=50mA, IB=5mA Gain Bandwidth Product at VCE=30V, IC=10mA Symbol hFE hFE ICBO IEBO VCE(sat) VBE(sat) fT Min. 60 100 - Typ.