Semtech Corporation 2SC4002
NPN Silicon Triple Diffused Planar Transistor
APPLICATIONS
. The transistor is subdivided into two groups, D and E, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.18gABSOLUTE MAXIMUM RATINGS
(T a = 25oC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP Ptot Tj TS G S P FORM A IS AVAILABLE Value 400 400 5 200 400 600 150 -55 to +150 Unit V V V mA mA mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: ® ST 2SC4002 Characteristics at Tamb=25 oC DC Current Gain at VCE=10V, IC=50mA Current Gain Group D E Collector Cutoff Current at VCB=300V Emitter Cutoff Current at VEB=4V Collector Emitter Saturation Voltage at IC=50mA, IB=5mA Base Emitter Saturation Voltage at IC=50mA, IB=5mA Gain Bandwidth Product at VCE=30V, IC=10mA Symbol hFE hFE ICBO IEBO VCE(sat) VBE(sat) fT Min.