Datasheet Details
| Part number | BM2300 |
|---|---|
| Manufacturer | Bookly |
| File Size | 291.44 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | BM2300-Bookly.pdf |
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Overview: BM2300 N Channel Enhancement Mode MOSFET 4A.
| Part number | BM2300 |
|---|---|
| Manufacturer | Bookly |
| File Size | 291.44 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | BM2300-Bookly.pdf |
|
|
|
The BM2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION SOT-23-3L 3 D G S 1 2 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L
| Part Number | Description |
|---|---|
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| BM2302 | N-Channel MOSFET |
| BM2341 | P-Channel Enhancement Mode MOSFET |
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