BM2300 Datasheet | Bookly

N Channel Enhancement Mode MOSFET 4A DESCRIPTION The BM2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L FEATURE z 20V/6.0A, RDS(ON) = 27mΩ (Typ.) @VGS = 10V z 20V/5.0A, RDS(ON)...