BM2341 Datasheet | Bookly

P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION BM2341 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L 1.Gate 2.Source 3.Drain FEATURE z -20V/-3.3A, RDS(ON) = 36m-ohm (Typ.) @VGS = -10V z -20V/-2.8A,...