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BM2341 - P-Channel Enhancement Mode MOSFET

General Description

BM2341 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number BM2341
Manufacturer Bookly
File Size 329.46 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet BM2341 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BM2341 P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION BM2341 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L 3 D G S 1 2 1.Gate 2.Source 3.Drain FEATURE z -20V/-3.3A, RDS(ON) = 36m-ohm (Typ.) @VGS = -10V z -20V/-2.8A, RDS(ON) = 45m-ohm @VGS = -4.5V z -20V/-2.3A, RDS(ON) = 55m-ohm @VGS = -1.