• Part: BU406
  • Description: NPN SILICON POWER TRANSISTORS
  • Category: Transistor
  • Manufacturer: Bourns
  • Size: 91.09 KB
Download BU406 Datasheet PDF
Bourns
BU406
BU406 is NPN SILICON POWER TRANSISTORS manufactured by Bourns.
BU406, BU407 NPN SILICON POWER TRANSISTORS - 7 A Continuous Collector Current - 15 A Peak Collector Current - 60 W at 25°C Case Temperature TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (VBE = -2 V) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. BU406 BU407 BU406 BU407 BU406 BU407 SYMBOL VCBO VCEX VCEO VEB IC ICM IB Ptot Tj Tstg VALUE 400 330 400 330 200 150 6 7 15 4 60 -55 to +150 -55 to +150 UNIT V A A A W °C °C PRODUCT INFORMATION AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BU406, BU407 NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Collector-emitter V(BR)CEO breakdown voltage IC = 30 m A IB = 0 Collector-emitter ICES cut-off current IEBO Emitter cut-off...