BU406 Datasheet and Specifications PDF

The BU406 is a Silicon NPN Power Transistors.

Key Specifications

Max Operating Temp150 °C
Min Operating Temp-80 °C

BU406 Datasheet

BU406 Datasheet (SavantIC)

SavantIC

BU406 Datasheet Preview

·With TO-220C package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·For use in horizontal deflection output stages of TV’s and CTV’s circuits PINNING PIN DESCRIPTION 1 B.

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BU406 Datasheet (Motorola Semiconductor)

Motorola Semiconductor

BU406 Datasheet Preview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BU406/D NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and.

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BU406 Datasheet (onsemi)

onsemi

BU406 Datasheet Preview

BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. Features • High Voltage • Fast Switching Speed • L.


* High Voltage
* Fast Switching Speed
* Low Saturation Voltage
* These Devices are Pb
*Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector
*Emitter Voltage Symbol BU406 VCEO BU407 Value 200 150 Unit Vdc Collector
*Emitter Voltage BU406 VCEV 400 Vdc BU407 330 Collector
*Base Voltage B.

BU406 Datasheet (Bourns)

Bourns

BU406 Datasheet Preview

BU406, BU407 NPN SILICON POWER TRANSISTORS ● 7 A Continuous Collector Current ● 15 A Peak Collector Current ● 60 W at 25°C Case Temperature TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in e.

ubject to change without notice. 1 BU406, BU407 NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Collector-emitter V(BR)CEO breakdown voltage IC = 30 mA IB = 0 140 V Collector-emitter ICES.

Price & Availability

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TME 1 1+ : 29.23 USD
5+ : 27.56 USD
25+ : 25.89 USD
View Offer