BU426 Datasheet | Bourns

.. BU426, BU426A NPN SILICON POWER TRANSISTORS - - Rugged Triple-Diffused Planar Construction 900 Volt Blocking Capability SOT-93 PACKAGE (TOP VIEW) 1 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Continuous collector current Peak collector current (see Note 1) Continuous base current Peak base current (see Note 1) Continuous device dissipation at (or below) 50°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%. BU426 BU426A BU426 BU426A BU426 BU426A SYMBOL V CBO VCES VCEO IC ICM IB IBM Ptot Tj Tstg VALUE 800 900 800 900 375 400 6 10 +2, -0.1 ±3 70 -65 to +150 -65 to +150 UNIT V V V A A A A W °C °C PRODUCT Data Sheet 4 U . INFORMATION AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. .. BU426, BU426A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) Collector-emitter sustaining voltage Collector-emitter cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage IC = 100 m A VCE = 800 V ICES VCE = 900 V VCE = 800 V VCE = 900 V IEBO h FE VCE(sat) VBE(sat) VEB = VCE = IB = IB = IB = IB = 10 V 5V 0.5 A 1.25 A 0.5 A 1.25 A TEST CONDITIONS L = 25 m H VBE = 0 VBE = 0 VBE = 0 VBE = 0 IC = 0 IC = 0.6 A IC = 2.5 A IC = IC = 4A 4A IC = 2.5 A (see Notes 3 and 4) (see Notes 3 and 4) (see Notes 3 and 4) 30 TC = 125°C TC = 125°C (see Note 2) BU426 BU426A BU426 BU426A BU426 BU426A MIN 375 400 1 1 2 2 10 60 1.5 3 1.4 1.6 V V m A m A TYP MAX UNIT V NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤...