BUL770 Datasheet | Bourns

.. BUL770 NPN SILICON POWER TRANSISTOR - - - - - Designed Specifically for High Frequency Electronic Ballasts up to 50 W h FE 7 to 21 at VCE = 1 V, IC = 800 m A Low Power Losses (On-state and Switching) Key Parameters Characterised at High Temperature Tight and Reproducible Parametric Distributions 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C ambient temperature (unless otherwise noted ) RATING Collector-emitter voltage (VBE = 0) Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Peak collector current (see Note 2) Continuous base current Peak base current (see Note 2) Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTES: 1. This value applies for tp = 10 ms, duty cycle ≤ 2%. 2. This value applies for tp = 300 µs, duty cycle ≤ 2%. SYMBOL VCES VCBO V CEO VEBO IC ICM ICM IB IBM Ptot Tj Tstg VALUE 700 700 400 9 2.5 6 8 1.5 2.5 50 -65 to +150 -65 to +150 UNIT V V V V A A A A A W °C °C PRODUCT Data Sheet 4 U . INFORMATION JULY 1991 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. .. BUL770 NPN SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V CEO(sus) ICES IEBO V BE(sat) VCE(sat) Collector-emitter sustaining voltage Collector-emitter cut-off current Emitter cut-off current Base-emitter saturation voltage Collector-emitter saturation voltage Forward current transfer ratio Collector-base forward bias diode voltage IC = 100 m A VCE = 700 V VCE = 700 V VEB = 9V TEST CONDITIONS L = 25 m H VBE = 0 VBE = 0 IC = 0 IC = 800 m A IC = 800 m A IC = 800 m A IC = 800 m A IC = 10 m A IC = 800 m A IC = 3.2 A (see Notes 4 and 5) TC = 90°C (see Notes 4 and 5) TC = 90°C 10 7 2 0.83 0.75 0.18 0.22 18.5 14.5 7.5 870 21 14 m V 0.25...