BUL770 Datasheet | Power Innovations Limited

BUL770 NPN SILICON POWER TRANSISTOR Copyright © 1997, Power Innovations Limited, UK JULY 1991 - REVISED SEPTEMBER 1997 q Designed Specifically for High Frequency Electronic Ballasts up to 50 W h FE 7 to 21 at VCE = 1 V, IC = 800 m A Low Power Losses (On-state and Switching) Key Parameters Characterised at High Temperature Tight and Reproducible Parametric Distributions TO-220 PACKAGE (TOP VIEW) q q q 1 2 3 q Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C ambient temperature (unless otherwise noted) RATING Collector-emitter voltage (V BE = 0) Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Peak collector current (see Note 2) Continuous base current Peak base current (see Note 2) Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTES: 1. This value applies for tp = 10 ms, duty cycle ≤ 2%. 2. This value applies for tp = 300 µs, duty cycle ≤ 2%. SYMBOL VCES VCBO VCEO V EBO IC ICM ICM IB IBM Ptot Tj Tstg VALUE 700 700 400 9 2.5 6 8 1.5 2.5 50 -65 to +150 -65 to +150 UNIT V V V V A A A A A W °C °C PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. BUL770 NPN SILICON POWER TRANSISTOR JULY 1991 - REVISED SEPTEMBER 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES IEBO VBE(sat) VCE(sat) Collector-emitter sustaining voltage Collector-emitter cut-off current Emitter cut-off current Base-emitter saturation voltage Collector-emitter saturation voltage Forward current transfer ratio Collector-base forward bias diode voltage IC = 100 m A VCE = 700 V VCE = 700 V VEB = 9V TEST...