BIDNW30N60H3 Description
Features n 600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat)) n Trench-Gate Field-Stop technology n Low switching loss n Fast switching n RoHS pliant Applications n Switch-Mode Power Supplies (SMPS) n Uninterruptible Power Sources (UPS) n Power Factor Correction (PFC) n Induction heating BIDNW30N60H3 Insulated Gate Bipolar Transistor (IGBT) General Information The Bourns® Model BIDNW30N60H3 IGBT device...