BIDNW30N60H3
BIDNW30N60H3 is Insulated Gate Bipolar Transistor manufactured by Bourns.
Features n 600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat)) n Trench-Gate Field-Stop technology n Low switching loss n Fast switching n RoHS pliant-
Applications n Switch-Mode Power Supplies (SMPS) n Uninterruptible Power Sources (UPS) n Power Factor Correction (PFC) n Induction heating
BIDNW30N60H3 Insulated Gate Bipolar Transistor (IGBT)
General Information
The Bourns® Model BIDNW30N60H3 IGBT device bines technology from a MOS gate and a bipolar transistor for an optimum ponent for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter...
