BIDW50N65T
BIDW50N65T is Insulated Gate Bipolar Transistor manufactured by Bourns.
Features n 650 V, 50 A, Low Collector-Emitter Saturation Voltage (VCE(sat)) n Trench-Gate Field-Stop technology n Optimized for conduction n RoHS pliant-
Applications n Switch-Mode Power Supplies (SMPS) n Uninterruptible Power Sources (UPS) n Power Factor Correction (PFC) n Inverters
BIDW50N65T Insulated Gate Bipolar Transistor (IGBT)
General Information
The Bourns® Model BIDW50N65T IGBT device bines technology from a MOS gate and a bipolar transistor for an optimum ponent for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage...
