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Features
n 650 V, 50 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
n Trench-Gate Field-Stop technology
n Optimized for conduction
n RoHS compliant*
Applications
n Switch-Mode Power Supplies (SMPS) n Uninterruptible Power Sources (UPS) n Power Factor Correction (PFC) n Inverters
BIDW50N65T Insulated Gate Bipolar Transistor (IGBT)
General Information
The Bourns® Model BIDW50N65T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses.
BIDW50N65T Datasheet
