BIDW50N65T Description
Features n 650 V, 50 A, Low Collector-Emitter Saturation Voltage (VCE(sat)) n Trench-Gate Field-Stop technology n Optimized for conduction n RoHS pliant Applications n Switch-Mode Power Supplies (SMPS) n Uninterruptible Power Sources (UPS) n Power Factor Correction (PFC) n Inverters BIDW50N65T Insulated Gate Bipolar Transistor (IGBT) General Information The Bourns® Model BIDW50N65T IGBT device bines technology from...