BS616LV1010
BS616LV1010 is Very Low Power/Voltage CMOS SRAM manufactured by Brilliance Semiconductor.
BSI Very Low Power/Voltage CMOS SRAM
64K X 16 bit
- Features
- Very low operation voltage : 2.4 ~ 5.5V
- Very low power consumption :
Vcc = 3.0V C-grade : 20m A (Max.) operating current I- grade : 25m A (Max.) operating current 0.02u A (Typ.) CMOS standby current
Vcc = 5.0V C-grade : 35m A (Max.) operating current I- grade : 40m A (Max.) operating current 0.4u A (Typ.) CMOS standby current
- High speed access time : -70 70ns (Max.) at Vcc = 3.0V
- Automatic power down when chip is deselected
- Three state outputs and TTL patible
- Fully static operation
- Data retention supply voltage as low as 1.5V
- Easy expansion with CE and OE options
- I/O Configuration x8/x16 selectable by LB and UB pin
- DESCRIPTION
The BS616LV1010 is a high performance, very low power CMOS Static Random Access Memory organized as 65,536 words by 16 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both...
