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BS616LV1010 - Very Low Power/Voltage CMOS SRAM

General Description

The BS616LV1010 is a high performance, very low power CMOS Static Random Access Memory organized as 65,536 words by 16 bits and operates from a wide range of 2.4V to 5.5V supply voltage.

Key Features

  • S.
  • Very low operation voltage : 2.4 ~ 5.5V.
  • Very low power consumption : Vcc = 3.0V C-grade : 20mA (Max. ) operating current I- grade : 25mA (Max. ) operating current 0.02uA (Typ. ) CMOS standby current Vcc = 5.0V C-grade : 35mA (Max. ) operating current I- grade : 40mA (Max. ) operating current 0.4uA (Typ. ) CMOS standby current.
  • High speed access time : -70 70ns (Max. ) at Vcc = 3.0V.
  • Automatic power down when chip is deselected.
  • Three state outputs and TT.

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Datasheet Details

Part number BS616LV1010
Manufacturer Brilliance Semiconductor
File Size 210.67 KB
Description Very Low Power/Voltage CMOS SRAM
Datasheet download datasheet BS616LV1010 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSI Very Low Power/Voltage CMOS SRAM 64K X 16 bit BS616LV1010 „ FEATURES • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade : 20mA (Max.) operating current I- grade : 25mA (Max.) operating current 0.02uA (Typ.) CMOS standby current Vcc = 5.0V C-grade : 35mA (Max.) operating current I- grade : 40mA (Max.) operating current 0.4uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 3.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.