• Part: BS616LV1623
  • Description: Very Low Power/Voltage CMOS SRAM
  • Manufacturer: Brilliance Semiconductor
  • Size: 251.40 KB
Download BS616LV1623 Datasheet PDF
Brilliance Semiconductor
BS616LV1623
BS616LV1623 is Very Low Power/Voltage CMOS SRAM manufactured by Brilliance Semiconductor.
BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable - Features - Vcc operation voltage : 2.7 ~ 3.6V - Very low power consumption : Vcc = 3.0V C-grade: 45m A (@55ns) operating current I -grade: 46m A (@55ns) operating current C-grade: 36m A (@70ns) operating current I -grade: 37m A (@70ns) operating current 3.0u A (Typ.) CMOS standby current - High speed access time : -55 55ns -70 70ns - Automatic power down when chip is deselected - Three state outputs and TTL patible - Fully static operation - Data retention supply voltage as low as 1.5V - Easy expansion with CE1, CE2 and OE options - I/O Configuration x8/x16 selectable by CIO, LB and UB pin - DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. Advanced CMOS technology and circuit...