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BS616LV1623 - Very Low Power/Voltage CMOS SRAM

General Description

The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage.

Key Features

  • S.
  • Vcc operation voltage : 2.7 ~ 3.6V.
  • Very low power consumption : Vcc = 3.0V C-grade: 45mA (@55ns) operating current I -grade: 46mA (@55ns) operating current C-grade: 36mA (@70ns) operating current I -grade: 37mA (@70ns) operating current 3.0uA (Typ. ) CMOS standby current.
  • High speed access time : -55 55ns -70 70ns.
  • Automatic power down when chip is deselected.
  • Three state outputs and TTL compatible.
  • Fully static operation.
  • Data re.

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Datasheet Details

Part number BS616LV1623
Manufacturer Brilliance Semiconductor
File Size 251.40 KB
Description Very Low Power/Voltage CMOS SRAM
Datasheet download datasheet BS616LV1623 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BS616LV1623 „ FEATURES • Vcc operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 45mA (@55ns) operating current I -grade: 46mA (@55ns) operating current C-grade: 36mA (@70ns) operating current I -grade: 37mA (@70ns) operating current 3.0uA (Typ.) CMOS standby current • High speed access time : -55 55ns -70 70ns • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.