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ACPL-W349 - 2.5-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler

Download the ACPL-W349 datasheet PDF. This datasheet also covers the ACPL-P349 variant, as both devices belong to the same 2.5-amp output current sic/gan mosfet and igbt gate drive optocoupler family and are provided as variant models within a single manufacturer datasheet.

General Description

The Broadcom® ACPL-P349/W349 contains an AlGaAs LED, which is optically coupled to an integrated circuit with a power output stage.

This optocoupler is ideally suited for driving SiC/GaN (Silicon Carbide/Gallium Nitride) MOSFETs and IGBTs used in power conversion applications.

Key Features

  • 2.5-A maximum peak output current.
  • Wide operating VCC range: 15V to 30V.
  • 110-ns maximum propagation delay.
  • 50-ns maximum propagation delay difference.
  • Rail-to-rail output voltage.
  • 100 kV/µs minimum Common Mode Rejection (CMR) at VCM = 1500V.
  • LED current input with hy.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ACPL-P349-Broadcom.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ACPL-W349
Manufacturer Broadcom
File Size 1.08 MB
Description 2.5-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler
Datasheet download datasheet ACPL-W349 Datasheet

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Other Datasheets by Broadcom

Part Number Description
ACPL-W346 GaN and SiC MOSFET Gate Drive Optocoupler
ACPL-W50L Digital Optocoupler
ACPL-W60L High-Speed LVTTL Optocoupler
ACPL-W61L Low-Power 10-MBd Digital CMOS Optocouplers
ACPL-W63L High-Speed LVTTL Optocoupler

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ACPL-P349 and ACPL-W349 2.5-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6 Data Sheet Description The Broadcom® ACPL-P349/W349 contains an AlGaAs LED, which is optically coupled to an integrated circuit with a power output stage. This optocoupler is ideally suited for driving SiC/GaN (Silicon Carbide/Gallium Nitride) MOSFETs and IGBTs used in power conversion applications. The high operating voltage range of the output stage provides the drive voltages required by gate controlled devices. The voltage and high peak output current supplied by this optocoupler make it ideally suited for direct driving SiC/GaN MOSFET and IGBT with ratings up to 1200V/100A. Features  2.