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MS23N18 - N-Channel MOSFET

General Description

These miniature surface mount MOSFETs utilize High Cell Density process.

Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.

Key Features

  • Low rDS(on) trench technology.
  • Low thermal impedance.
  • Fast switching speed.
  • RoHS compliant package Typical.

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Datasheet Details

Part number MS23N18
Manufacturer Bruckewell
File Size 420.30 KB
Description N-Channel MOSFET
Datasheet download datasheet MS23N18 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MS23N18 N-Channel 30-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed • RoHS compliant package Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MS23N18] © Bruckewell Technology Corporation Rev.