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MS23P01S Datasheet P-channel Enhancement Mode Power MOSFET

Manufacturer: Bruckewell Technology

Overview: MS23P01S P-Channel Enhancement Mode Power MOSFET.

General Description

The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

General

Key Features

  • VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D G S Schematic diagram.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Marking and pin assignment.

MS23P01S Distributor