MSF6N60 Datasheet | Bruckewell Technology

scription The MSF6N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all mercial-industrial applications ID=5.5A - Features : VDS=600V - BVDSS=650V typically @ Tj=150°C - Low On Resistance - Simple Drive Requirement - Low Gate Charge - Fast Switching Characteristic - Ro HS pliant package - APPLICATION: - Open Framed Power Supply - Adapter - STB RDS(on)max = 2.0 @VGS = 10 V TO220F Absolute Maximum Ratings Symbol VDSS VGS ID IDM EAS IAR dv/dt TL TPKG PD TSTG TJ Parameter Drain to Source Voltage Gate to Source Voltage Continuous Drain Current(@TC = 25 °C) Continuous Drain Current(@TC = 100 °C) Drain Current Pulsed Single Pulsed Avalanche Energy Avalanche Current Peak Diode Recovery dv/dt Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature Storage Temperature Value 600 ±30 5.5 3.3 22 300 5.5 4.5 300 260 40 0.31 -55 ~ 150 150 Units V V A A A m J A V/ns °C °C W W/°C °C °C http://.. Bruckewell Technology Corp., Ltd. http://.bruckewell-semi. Note: 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=4A, VDD=50V, L=8m H, VG=10V, starting TJ=+25°C. 3. ISD≤4A, d I/dt≤100A/ s, VDD≤BVDSS, starting TJ=+25°C. Thermal Characteristics Symbol Parameter Min. RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Value Typ. Max. 3.7 62.5 °C/W °C/W Units Bruckewell Technology Corp., Ltd. http://.bruckewell-semi. Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol BVDSS ΔBVDSS/ ΔTJ VGS(th) IDSS Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Gate Threshold Voltage Drain-Source Leakage Current Test Conditions VGS =...