MSF8N80-G Datasheet | Bruckewell Technology

DESCRIPTION This Power MOSFET is produced using the advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology. Features - RDS(on) (typ 1.3 Ω )@VGS=10V - Gate Charge (Typical 39n C) - Improved dv/dt Capability, High Ruggedness - 100% Avalanche Tested - Maximum Junction Temperature Range (150°C) - Halogen Free Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current (Tc=25°C unless otherwise specified) Parameter Value 800 8 5.0 32 ±30 850 17.8 4.5 59 - Derate above 25℃ 0.48 - 55 to + 150 300 Unit V A A A V m J m J V/ns W W/℃ ℃ ℃ -Continuous (TC=25℃) -Continuous (TC=100℃) -Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC=25℃) Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds - Drain current limited by maximum junction temperature ©Bruckewell Technology Corporation Rev. A -2012 http://.. MSF8N80-G 800V N-Channel MOSFET Thermal Resistance Characteristics Symbol RθJC RθJA Junction-to-Case Junction-to-Ambient Parameter Typ. - - - - Max. 2.1 62.5 Units ℃/W Electrical Characteristics Symbol Parameter (Tc=25°C unless otherwise specified) Test Conditions Min Type Max Units On Characteristics...