MSU4N60 Datasheet | Bruckewell Technology

DESCRIPTION The MSU4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all mercial-industrial applications TO-251 Features - Low On Resistance - Simple Drive Requirement - Low Gate Charge - Fast Switching Characteristic - Ro HS pliant / Halogen free package available 1.Gate 2. Drain 3. Source Symbol VDSS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Continuous Drain Current(@TC = 25 °C) Continuous Drain Current(@TC = 100 °C) Value 600 ±30 4.5 2.6 18 33 4.0 10 4.5 300 Units V V A A A m J A m J V/ns °C IDM EAS IAR EAR dv/dt TL Drain Current Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds TPKG PD Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C 260 31 0.25 -55 ~ 150 150 °C W W/°C °C °C TSTG TJ Note: Operating Junction Temperature Storage Temperature 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=4A, VDD=50V, L=8m H, VG=10V, starting TJ=+25°C. 3. ISD≤4A, d I/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25°C. ©Bruckewell Technology Corporation Rev. A -2012 http://.. MSU4N60 600V N-Channel MOSFET Thermal Characteristics Symbol Parameter Min. RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Value Typ. Max. 2.8 50.0 °C/W °C/W Units Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Test Conditions Min Typ Max...