MSU6N70 Datasheet | Bruckewell Technology

DESCRIPTION The MSU6N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all mercial-industrial applications TO-251 Features - Low On Resistance - Simple Drive Requirement - Low Gate Charge - Fast Switching Characteristic - Ro HS pliant / Halogen free package available 1.Gate 2. Drain 3. Source Symbol VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Parameter Value 700 ±30 6.0 4.8 28 230 7.0 14.7 4.5 300 Units V V A A A m J A m J V/ns °C Continuous Drain Current(@TC = 25 °C) Continuous Drain Current(@TC = 100 °C) IDM EAS IAR EAR dv/dt TL Drain Current Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds TPKG Maximum Temperature for Soldering @ Package Body for 10 seconds °C Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C 48 0.38 -55 ~ 150 150 W W/°C °C °C TSTG TJ Note: Operating Junction Temperature Storage Temperature 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS≤6A, VDD=50V, L=7m H, VG=10V, starting TJ=+25°C. 3. ISD≤6A, d I/dt≤200A/μs, VDD≤BVDSS, starting TJ=+25°C. ©Bruckewell Technology Corporation Rev. A -2012 http://.. MSU6N70 700V N-Channel MOSFET Thermal Characteristics Symbol Parameter Min. RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Value Typ. Max. 2.6 62.5 °C/W °C/W Units Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Test Conditions Min Typ Max Units Static Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ ΔTJ VGS(th) Breakdown Voltage Temperature coefficient Gate Threshold Voltage VGS = 0 V, ID = 250 u A ID = 250 u A, referenced to 25 °C VDS = VGS, ID = 250 u A IDSS...